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H. L’haridon

Centre national d'études des télécommunications

26

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245

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Investigation of InP single crystal by LST and photoluminescence-Influence of dopants, dislocations and size of crystals

1993 IPRM | International Conference on Indium Phosphide and Related Materials
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Ion implantation damage and annealing in GaSb

1993 Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
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Epi-ready InP wafers by oxide passivation

1991 Iii-vs Review
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Inhomogeneity in a semi-insulating indium phosphide ingot

1991 Journal of Crystal Growth
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Spatial investigation of an iron-doped indium phosphide ingot

1991 Applied Surface Science
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Protection of InP epi-ready wafers by controlled oxide growth

1991 IPRM | International Conference on Indium Phosphide and Related Materials
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Epitaxial growth of Si on Er-implanted Si substrates

1990 Materials Letters
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Spatial distribution of donors in silicon implanted iron and iron-gallium doped semi-insulating indium phosphide

1990 Journal of Crystal Growth
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New LED In Synthesized InP : Yb Material

1989
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1.54 μm photoluminescence of erbium-implanted silicon

1989 Materials Science and Engineering B-advanced Functional Solid-state Materials
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Citations (25)