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Yves Morand
Yves Morand
Electronic engineering
Transistor
Chemistry
MOSFET
Biasing
3
Papers
120
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Self-Aligned Planar Double-Gate MOSFETs by Bonding for 22-nm Node, With Metal Gates, High- $\kappa$ Dielectrics, and Metallic Source/Drain
2009
IEEE Electron Device Letters
M. Vinet
Thierry Poiroux
C. Licitra
Julie Widiez
Jyotshna Bhandari
B. Previtali
C. Vizioz
Dominique Lafond
C. Arvet
P. Besson
L. Baud
Yves Morand
Maurice Rivoire
Fabrice Nemouchi
V. Carron
S. Deleonibus
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Citations (13)
An easily integrable NiSi TOSI-gate/SiON-module for LP SRAM applications based on a single step silicidation of gate and junction
2005
IEDM | International Electron Devices Meeting
M. Muller
Alexandre Mondot
N. Gierczynski
D. Aimé
Benoit Froment
F. Leverd
P. Gouraud
Alexandre Talbot
S. Descombes
Yves Morand
Y. Le Tiec
P. Besson
A. Toffoli
G. Ribes
J.M. Roux
Simone Pokrant
F. André
T. Skotnicki
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Citations (2)
Bonded planar double-metal-gate NMOS transistors down to 10 nm
2005
IEEE Electron Device Letters
M. Vinet
Thierry Poiroux
Julie Widiez
J. Lolivier
B. Previtali
C. Vizioz
B. Guillaumot
Y. Le Tiec
P. Besson
Beatrice Biasse
Fabienne Allain
M. Casse
Dominique Lafond
J.-M. Hartmann
Yves Morand
J. Chiaroni
S. Deleonibus
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Citations (105)
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