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T. Miura
T. Miura
Mitsubishi
Optoelectronics
Metalorganic vapour phase epitaxy
Physics
Indium phosphide
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4
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30
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A GSM/EDGE dual-mode, 900/1800/1900-MHz triple-band HBT MMIC power amplifier module
2002
RFIC | Radio Frequency Integrated Circuits Symposium
Kazuya Yamamoto
T. Asada
Satoshi Suzuki
T. Miura
Akira Inoue
Shinichi Miyakuni
J. Otsuji
Ryo Hattori
Y. Miyazaki
Teruyuki Shimura
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High efficiency AlGaAs/GaAs power HBTs at a low supply voltage for digital cellular phones
1996
GAICS | IEEE Gallium Arsenide Integrated Circuit Symposium
T. Miura
T. Shimura
Kazutomi Mori
Y. Uneme
H. Nakano
Akira Inoue
R. Hattori
N. Tanino
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Improved selective growth of InP around dry-etched mesas by LP-MOCVD at low growth temperature
1995
IPRM | International Conference on Indium Phosphide and Related Materials
Masayoshi Takemi
T. Kimura
T. Miura
Yutaka Mihashi
S. Takamiya
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Selective MOCVD growth of InP around dry-etched mesas with various patterns for photonic integrated circuits
1995
IPRM | International Conference on Indium Phosphide and Related Materials
Katsuhiko Goto
Masayoshi Takemi
T. Miura
Akira Takemoto
Yutaka Mihashi
S. Takamiya
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