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M. L. Colussi

Universidade Federal de Santa Maria

3

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Doping effects of C, Si and Ge in wurtzite [0001] GaN, AlN, and InN nanowires

2011 Journal of Applied Physics
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Stability and electronic properties of native defects and substitutional impurities in GaN nanotubes

2008 Journal of Applied Physics
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Silicon adsorption in single walled nanotubes

2006 Brazilian Journal of Physics
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