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Junwoo Jang
Junwoo Jang
Samsung
Neuromorphic engineering
Optoelectronics
Physics
Conductance
Resistive random-access memory
3
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51
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Non-filamentary non-volatile memory elements as synapses in neuromorphic systems
2019
NVMTS | Non-Volatile Memory Technology Symposium
Alessandro Fumarola
Yusuf Leblebici
Pritish Narayanan
Robert M. Shelby
L.L. Sanchez
Geoffrey W. Burr
K. Moon
Junwoo Jang
Hyunsang Hwang
Severin Sidler
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Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr 0.7 Ca 0.3 MnO 3 Material Improvements and Device Measurements
2018
IEEE Journal of the Electron Devices Society
Kibong Moon
Alessandro Fumarola
Severin Sidler
Junwoo Jang
Pritish Narayanan
Robert M. Shelby
Geoffrey W. Burr
Hyunsang Hwang
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Citations (36)
Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part II: Impact of Al/Mo/Pr 0.7 Ca 0.3 MnO 3 Device Characteristics on Neural Network Training Accuracy
2018
IEEE Journal of the Electron Devices Society
Alessandro Fumarola
Severin Sidler
Kibong Moon
Junwoo Jang
Robert M. Shelby
Pritish Narayanan
Yusuf Leblebici
Hyunsang Hwang
Geoffrey W. Burr
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Citations (15)
1