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Hsin-Han Lee
Hsin-Han Lee
Industrial Technology Research Institute
Electronic engineering
Chemistry
Torque
Magnetoresistive random-access memory
Analytical chemistry
3
Papers
121
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Pulse-Width and Temperature Effect on the Switching Behavior of an Etch-Stop-on-MgO-Barrier Spin-Orbit Torque MRAM Cell
2018
IEEE Electron Device Letters
Sk. Ziaur Rahaman
I-Jung Wang
Tian-Yue Chen
Chi-Feng Pai
Ding-Yeong Wang
Jeng-Hua Wei
Hsin-Han Lee
Yu-Chen Hsin
Yao-Jen Chang
Shan-Yi Yang
Yi-Ching Kuo
Yi-Hui Su
Yu-Sheng Chen
Keh-Ching Huang
Chih-I Wu
Duan-Li Deng
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Citations (15)
On the Hardware Implementation of MRAM Physically Unclonable Function
2017
IEEE Transactions on Electron Devices
Yu-Sheng Chen
Ding-Yeong Wang
Yu-Chen Hsin
Kai-Yu Lee
Guan-Long Chen
Shan-Yi Yang
Hsin-Han Lee
Yao-Jen Chang
I-Jung Wang
Pei-Hua Wang
Chih-I Wu
D. D. Tang
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Citations (7)
Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics
2015
IEEE Electron Device Letters
Min-Hung Lee
Y.-T. Wei
K.Y. Chu
John Huang
Chu-Yu Chen
C.-C. Cheng
Min-Cheng Chen
Hsin-Han Lee
Yu-Cheng Chen
L.-H. Lee
Ming-Jinn Tsai
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Citations (99)
1