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N. Rohson
N. Rohson
Dram
Materials science
Voltage
Trench
Pass transistor logic
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A 0.168pm2/0.1 1pm2 Highly Scatable High Performance embedded DRAM Cell for 90165-nm Logic Applications
2004
Geng Wang
Paul C. Parries
Babar A. Khan
Jin Liu
Yoichi Otani
James P. Norum
N. Rohson
Toshiaki Kirihata
Ibm Semiconductor
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