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T. Tsutsumi
T. Tsutsumi
Mitsubishi Electric
Electronic engineering
CMOS
Materials science
Nuclear magnetic resonance
Reaction mechanism
4
Papers
7
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Advanced ion implantation and rapid thermal annealing technologies for highly reliable 0.25μm dual gate CMOS
1996
Symposium on VLSI Technology
S. Shimizu
T. Kuroi
Y. Kawasaki
T. Tsutsumi
H. Oda
Masahide Inuishi
H. Miyoshi
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0.15 μm CMOS process for high performance and high reliability
1994
International Electron Devices Meeting
S. Shimizu
T. Kuroi
Maiko Kobayashi
Takehisa Yamaguchi
T. Fujino
H. Maeda
T. Tsutsumi
Y. Hirose
Shigeru Kusunoki
Masahide Inuishi
Natsuro Tsubouchi
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POLARIZATION TRANSFER MEASUREMENTS FOR THE (d, pX) REACTION AT Ed=65 MeV AND THE REACTION MECHANISM FOR THE PROTONS IN THE CONTINUUM
1990
Le Journal De Physique Colloques
M. Ieiri
Hidetsugu Sakaguchi
M. Nakamura
T. Noro
H. Sakamoto
Masaru Yosoi
T. Ichihara
Y. Takeuchi
H Togawa
T. Tsutsumi
S. Hirata
Takashi Z. Nakano
S. Kobayashi
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Development of 7.2 kV-63 kA Advanced Puffer Gas Circuit Breaker
1982
IEEE Power & Energy Magazine
Yoshihiro Ueda
Y. Murai
A. Ohno
T. Tsutsumi
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Citations (6)
1