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J. Paul
J. Paul
GlobalFoundries
Optoelectronics
Physics
Electronic engineering
Logic gate
Field-effect transistor
4
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208
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A cost-efficient 28nm split-gate eFLASH memory featuring a HKMG hybrid bit cell and HV device
2018
IEDM | International Electron Devices Meeting
Ralf Richter
Martin Trentzsch
S. Dunkel
J. Muller
P. Moll
Boris Bayha
K. Mothes
A. Henke
Martin Mazur
J. Paul
Peter Krottenthaler
J. Poth
S. Jansen
R. Huselitz
Hoon Kim
Alban Zaka
Tom Herrmann
El Mehdi Bazizi
Sven Beyer
Parviz Ghazavi
Henry Om'mani
Steven Lemke
Yuri Tkachev
F. Zhou
Jinho Kim
Xian Liu
Vipin Tiwari
Nhan Do
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A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
2016
IEDM | International Electron Devices Meeting
Martin Trentzsch
Stefan Flachowsky
Ralf Richter
J. Paul
Berthold Reimer
D. Utess
S. Jansen
Halid Mulaosmanovic
Stefan Müller
Stefan Slesazeck
J. Ocker
M. Noack
Johannes Müller
P. Polakowski
J. Schreiter
Sven Beyer
T. Mikolajick
B. Rice
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Citations (139)
強誘電体FETに基づく28nmH KMG超低電力組み込みNVM技術【Powered by NICT】
2016
Martin Trentzsch
Stefan Flachowsky
Ralf Richter
J. Paul
Berthold Reimer
D. Utess
S. Jansen
Halid Mulaosmanovic
Stefan Müller
Stefan Slesazeck
J. Ocker
M. Noack
Johannes Müller
P. Polakowski
J. Schreiter
Sven Beyer
T. Mikolajick
B. Rice
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Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells
2015
IEDM | International Electron Devices Meeting
Halid Mulaosmanovic
Stefan Slesazeck
J. Ocker
Milan Pešić
Stefan Müller
Stefan Flachowsky
Johannes Müller
P. Polakowski
J. Paul
S. Jansen
Sabine Kolodinski
Claudia Richter
S. Piontek
Tony Schenk
Alfred Kersch
Christopher Künneth
R. van Bentum
Uwe Schröder
Thomas Mikolajick
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