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Changmin Hong
Changmin Hong
Samsung
Electronic engineering
Static random-access memory
Materials science
Tungsten
Shunt (electrical)
3
Papers
15
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High Speed and Highly Cost effective 72M bit density S 3 SRAM Technology with Doubly Stacked Si Layers, Peripheral only CoSix layers and Tungsten Shunt W/L Scheme for Standalone and Embedded Memory
2007
VLSIT | Symposium on VLSI Technology
Soon-Moon Jung
Hoon Lim
Chadong Yeo
Kun-Ho Kwak
Byoungkeun Son
Han-Byung Park
J.H. Na
Jae-Joo Shim
Changmin Hong
Kinam Kim
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with Doubly Stacked Si Layers, Peripheral only CoSix layers and Tungsten Shunt W/L Scheme for Standalone and Embedded Memory
2007
Jae-Joo Shim
Changmin Hong
Kinam Kim
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High Density and Ultra-Low Power Mobile SRAM Using the Novel Double S3 (Stacked Single-crystal Silicon) Technology and KrF lithography
2005
The Japan Society of Applied Physics
Kun-Ho Kwak
Won-Seok Cho
Jong-Hyuk Kim
Jae-Joo Shim
Hoon Lim
Jae Hoon Jeong
Changmin Hong
Jin-Ho Kim
Hoosung Cho
Bonghyun Choi
Joo-Young Kim
Sunghyun Kwon
Soon-Moon Jung
Kinam Kim
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