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S. Johnson
S. Johnson
Texas Instruments
Leakage (electronics)
Electronic engineering
Optoelectronics
Lateral diffusion
Boron
2
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A 1.2V low leakage low cost 90 nm CMOS wireless technology with a 60 nm transistor gate length
2003
VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
Shyh-Horng Yang
Gordon P. Pollack
X. Wang
Suresh Potla
Greg C. Baldwin
F. Chen
Freidoon Mehrad
T. Tran
Kayvan Sadra
P. R. Chidambaram
Srinivasan Chakravarthi
C. Bowen
G. Wells
Leif Christian Olsen
J. Wu
Theodore W. Houston
C. Machala
S. Johnson
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Performance enhancements for 50 nm PMOS by angled pre-amorphization implants and fluorine implants
2003
P. R. Chidambaram
Shashank S. Ekbote
Srinivasan Chakravarthi
A. Chatterjee
C. Machala
S. Johnson
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