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Qi Xie
Qi Xie
Katholieke Universiteit Leuven
Gallium
Analytical chemistry
Electrical resistivity and conductivity
Doping
Germanium
2
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Ultra-low Specific Contact Resistivity (3.2×10 -10 Ω-cm 2 ) of Ti/Si 0.5 Ge 0.5 Contact: Deep Insights into the Role of Interface Reaction and Ga Co-doping
2021
VLSIT | Symposium on VLSI Technology
Haiwen Xu
Xinke Wang
Sheng Luo
Jishen Zhang
Kaizhen Han
Chen Sun
Chengkuan Wang
Rami Khazaka
Qi Xie
Yi Huang
Yi Zhou
Jiaqing He
Gengchiau Liang
Xiao Gong
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Surface Ga-boosted Boron-doped $\mathrm{Si}_{0.5}\mathrm{Geo}_{0.5}$ using In-situ CVD Epitaxy: Achieving $1.1 \times 10^{21}\mathrm{cm}^{-3}$ Active Doping Concentration and $5.7\times 10^{-10}\Omega-\mathrm{cm}^{2}$ Contact Resistivity
2020
VLSIT | Symposium on VLSI Technology
Haiwen Xu
Jishen Zhang
Lucas P. B. Lima
Joe Margetis
Rami Khazaka
Qi Xie
John Tolle
Chengkuan Wang
Haibo Wang
Zuopu Zhou
Qiwen Kong
Xiao Gong
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