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Jeong-Hyong Yi
Jeong-Hyong Yi
Samsung
Optoelectronics
Electronic engineering
Materials science
Gate dielectric
Flash memory
5
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82
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Hole Mobility Characteristics under Electrical Stress for Surface-Channel Germanium Transistors with High-κ Gate Stack
2008
Japanese Journal of Applied Physics
Jeong-Hyong Yi
Saeroonter Oh
H.-S. Philip Wong
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Electrical Stress Effects on Mobility of Germanium-On-Insulator (GeOI) pMOSFETs with HfO2 Gate Dielectric
2007
The Japan Society of Applied Physics
Jeong-Hyong Yi
Saeroonter Oh
H.-S. Philip Wong
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A 117-mm/sup 2/ 3.3-V only 128-Mb multilevel NAND flash memory for mass storage applications
1996
IEEE Journal of Solid-state Circuits
Tae-Sung Jung
Young-joon Choi
Kang-Deog Suh
Byung-Hoon Suh
Jin-Ki Kim
Young-Ho Lim
Yong-Nam Koh
Jong-Wook Park
Ki-Jong Lee
Jung-Hoon Park
Kee-Tae Park
Jhang-rae Kim
Jeong-Hyong Yi
Hyung-Kyu Lim
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Citations (80)
High Density Flash Memory Using a Novel Bipolar Action-Controlled Electrical Fuse
1996
The Japan Society of Applied Physics
Jeong-Hyong Yi
Jonghan Kim
Jeong-Hyuk Choi
Chilhee Chung
S.T. Ahn
Oh-Hyun Kwon
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Manufacturing of nonvolatile semiconductor memory device
1995
Jeong-Hyuk Choi
Jeong-Hyong Yi
tei kou sumomo
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