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Shogo Kimura
Shogo Kimura
Applied Science Private University
Doppler broadening
Vacancy defect
Annihilation radiation
Positron
Atomic physics
5
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30
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Point defects introduced by InN alloying into InxGa1−xN probed using a monoenergetic positron beam
2013
Journal of Applied Physics
Akira Uedono
T. Tsutsui
Tomohito Watanabe
Shogo Kimura
Yang Zhang
Mickael Lozach
Liwen Sang
Shoji Ishibashi
Masatomo Sumiya
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Citations (8)
Vacancy-type defects introduced by plastic deformation of GaN studied using monoenergetic positron beams
2013
Journal of Applied Physics
Akira Uedono
Ichiro Yonenaga
Tomohito Watanabe
Shogo Kimura
Nagayasu Oshima
Ryoichi Suzuki
Shoji Ishibashi
Yutaka Ohno
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Citations (7)
Vacancy-type defects in InxGa1−xN grown on GaN templates probed using monoenergetic positron beams
2013
Journal of Applied Physics
Akira Uedono
Tomohito Watanabe
Shogo Kimura
Yang Zhang
Mickael Lozach
Liwen Sang
Shoji Ishibashi
Nagayasu Oshima
Ryoichi Suzuki
Masatomo Sumiya
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Citations (9)
Vacancy-Type Defects Introduced by Gas Cluster Ion-Implantation on Si Studied by Monoenergetic Positron Beams
2012
Japanese Journal of Applied Physics
Akira Uedono
Tsuyoshi Moriya
T. Tsutsui
Shogo Kimura
Nagayasu Oshima
Ryoichi Suzuki
Shoji Ishibashi
Hidefumi Matsui
Masaki Narushima
Yoichi Ishikawa
Michael Gräf
Koji Yamashita
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Citations (5)
Vacancy-type defects introduced by gas cluster ion implantation to Si probed by monoenergetic positron beams
2012
IWJT | International Workshop on Junction Technology
A Uedono
Tsuyoshi Moriya
T. Tsutsui
Shogo Kimura
Nagayasu Oshima
R. Suzuki
Shoji Ishibashi
Hidefumi Matsui
Masaki Narushima
Yoichi Ishikawa
M. Gräf
K. Yamashita
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