Old Web
English
Sign In
Acemap
>
authorDetail
>
Joshua S. Wallace
Joshua S. Wallace
University at Buffalo
Analytical chemistry
Band gap
Band offset
Semimetal
Physics
4
Papers
154
Citations
0.00
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (4)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
Structural, band and electrical characterization of β-(Al0.19Ga0.81)2O3 films grown by molecular beam epitaxy on Sn doped β-Ga2O3 substrate
2019
Journal of Applied Physics
Abhishek Vaidya
Jith Sarker
Yi Zhang
Lauren Lubecki
Joshua S. Wallace
Jonathan D. Poplawsky
Kohei Sasaki
Akito Kuramata
Amit Goyal
Joseph A. Gardella
Baishakhi Mazumder
Uttam Singisetti
Show All
Source
Cite
Save
Citations (14)
Ga 2 O 3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology
2017
IEEE Electron Device Letters
Ke Zeng
Joshua S. Wallace
Christopher Heimburger
Kohei Sasaki
Akito Kuramata
Takekazu Masui
Joseph A. Gardella
Uttam Singisetti
Show All
Source
Cite
Save
Citations (81)
Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride
2016
Journal of Electronic Materials
Ye Jia
Joshua S. Wallace
Yueling Qin
A Joseph GardellaJr.
A. M. Dabiran
Uttam Singisetti
Show All
Source
Cite
Save
Citations (2)
Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 ( 2¯01)
2015
Applied Physics Letters
Ye Jia
Ke Zeng
Joshua S. Wallace
Joseph A. Gardella
Uttam Singisetti
Show All
Source
Cite
Save
Citations (57)
1