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W. Jones
W. Jones
Wright Laboratory
High-electron-mobility transistor
Monolithic microwave integrated circuit
Optoelectronics
Amplifier
Physics
4
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72
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A flexible 3-inch fabrication line for InP-based HEMT and HBT MMIC production
1997
IPRM | International Conference on Indium Phosphide and Related Materials
Jeff Elliott
L.T. Tran
R. Lai
T. Block
J. Cowles
D. Tran
W. Jones
Y.C. Chen
A.K. Oki
D.C. Streit
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Citations (6)
A 94-GHz 130-mW InGaAs/InAlAs/InP HEMT high-power MMIC amplifier
1997
IEEE Microwave and Guided Wave Letters
Yaochung Chen
R. Lai
E.W. Lin
H. Wang
T. Block
H.C. Yen
D.C. Streit
W. Jones
P.H. Liu
R.M. Dia
T.W. Huang
P. Huang
K. Stamper
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Citations (20)
Optimization of InGaAs/InAlAs/InP HEMT gate recess process for high frequency and high power applications
1997
IPRM | International Conference on Indium Phosphide and Related Materials
Yaochung Chen
R. Lai
H. Wang
H.C. Yen
D. Streit
R.M. Dia
W. Jones
T. Block
P.H. Liu
T.-W. Huang
Y.C. Chou
K. Stamper
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Citations (12)
D-band MMIC LNAs with 12 dB gain at 155 GHz fabricated on a high yield InP HEMT MMIC production process
1997
IPRM | International Conference on Indium Phosphide and Related Materials
R. Lai
H. Wang
Y.C. Chen
T. Block
P.H. Liu
D.C. Streit
D. Tran
Peter H. Siegel
M. Barsky
W. Jones
T. Gaier
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Citations (34)
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