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Y. Furuhashi
Y. Furuhashi
Hosei University
Ion implantation
Crystal growth
Hall effect
Atomic physics
Doping
1
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6
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Electrical properties of n-type layers formed in GaN by Si implantation
2006
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
Y. Furuhashi
S. Yoshida
D. Ozaki
Taroh Inada
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