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B. Martin
B. Martin
IBM
Electronic engineering
Electrical engineering
Physics
CMOS
Heterojunction bipolar transistor
5
Papers
88
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Using silicon-germanium mainstream BiCMOS technology for X-band and LMDS (25-30 GHz) microwave applications
2002
IMS | International Microwave Symposium
S. Subbanna
R. Groves
Basanth Jagannathan
David R. Greenberg
G. Freeman
Richard P. Volant
D. Ahlgren
B. Martin
Kenneth J. Stein
D. Herman
Bernard S. Meyerson
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Citations (5)
Noise performance and considerations for integrated RF/analog/mixed-signal design in a high-performance SiGe BiCMOS technology
2001
IEDM | International Electron Devices Meeting
David R. Greenberg
Susan L. Sweeney
C. Lamothe
Keith A. Jenkins
D Friedman
B. Martin
G. Freeman
D. Ahlgren
S. Subbanna
Alvin J. Joseph
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Citations (12)
A SiGe HBT BiCMOS technology for mixed signal RF applications
1997
BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
D. Ahlgren
G. Freeman
S. Subbanna
R. Groves
David R. Greenberg
J. Malinowski
D. Nguyen-Ngoc
S.-J. Jeng
Kenneth J. Stein
Kathryn T. Schonenberg
D. Kiesling
B. Martin
S. Wu
D.L. Harame
Bernard S. Meyerson
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Citations (64)
Gate-assisted lateral PNP active load for analog SiGe HBT technology
1996
BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
D.A. Sunderland
S.-J. Jeng
D. Nguyen-Ngoc
B. Martin
E. Eld
T. Tewksbury
D. Ahlgren
M. Gilbert
J. Malinowski
Kathryn T. Schonenberg
Kenneth J. Stein
Bernard S. Meyerson
D.L. Harame
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200 mm process integration for a 0.15 /spl mu/m channel-length CMOS technology using mixed X-ray/optical lithography
1994
IEDM | International Electron Devices Meeting
S. Subbanna
E. Ganin
E.F. Crabbe
J.H. Comfort
S. Wu
P. Agnello
B. Martin
M. McCord
H. Ng
Thomas Harold Newman
P. McFarland
J.Y.-C. Sun
J. Snare
Alexandre Acovic
A. Ray
R. Gehres
R. Schulz
Stephen E. Greco
E. Beyer
Lars W. Liebmann
Ronald A. DellaGuardia
Angela C. Lamberti
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Citations (5)
1