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Jiandong Ye

South China University of Technology
Nanjing University

297

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4703

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The effect of oxygen annealing on characteristics of β-Ga2O3 solar-blind photodetectors on SiC substrate by ion-cutting process

2022 Journal of Alloys and Compounds
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Demonstration of Ni/NiOx/β-Ga2O3 heterojunction diode with F plasma pre-treatment for reducing on-resistance and reverse leakage current

2022 Applied Surface Science
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β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2

2021 Applied Physics Letters
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Demonstration of the p-NiOx/n-Ga2O3 Heterojunction Gate FETs and Diodes with BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2

2021 IEEE Electron Device Letters
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Sustainable Solar Evaporation from Solute Surface via Energy Downconversion

2021
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Toward Emerging Gallium Oxide Semiconductors: A Roadmap

2021
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Gate-first AlGaN/GaN HEMT technology for enhanced threshold voltage stability based on MOCVD-grown in situ SiNx

2021 Journal of Physics D
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A self-powered solar-blind photodetector based on polyaniline/α-Ga2O3 p–n heterojunction

2021 Applied Physics Letters
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1.37 kV/12 A NiO/-Ga2O3 Heterojunction Diode with Nanosecond Reverse Recovery and Rugged Surge-Current Capability

2021 IEEE Transactions on Power Electronics
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Nitrogen modulation of boron doping behavior for accessible n-type diamond

2021 APL Materials
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