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A. Annunziata
A. Annunziata
Micron Technology
Electronic engineering
Magnetoresistive random-access memory
Spin-transfer torque
Electrical engineering
Physics
4
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59
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Low-current Spin Transfer Torque MRAM
2017
VLSIT | Symposium on VLSI Technology
Guohan Hu
J. Nowak
G. Lauer
J.H. Lee
J. Z. Sun
J. Harms
A. Annunziata
Sam Brown
Wei Chen
Y. H. Kim
N. Marchack
S. Murthy
C. Kothandaraman
E. O'Sullivan
J. H. Park
M. Reuter
R. Robertazzi
Philip Louis Trouilloud
Y. Zhu
Daniel C. Worledge
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Citations (3)
Low-current Spin Transfer Torque MRAM
2017
VLSI-DAT | International Symposium on VLSI Design, Automation and Test
Guohan Hu
J. Nowak
G. Lauer
J.H. Lee
J. Z. Sun
J. Harms
A. Annunziata
Sam Brown
Wei Chen
Y. H. Kim
N. Marchack
S. Murthy
Chandrasekharan Kothandaraman
Eugene J. O'Sullivan
J. H. Park
M. Reuter
R. Robertazzi
Philip Louis Trouilloud
Y. Zhu
Daniel C. Worledge
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Citations (2)
STT-MRAM with double magnetic tunnel junctions
2015
IEDM | International Electron Devices Meeting
Guohan Hu
J.H. Lee
J. Nowak
J. Z. Sun
J. Harms
A. Annunziata
Sam Brown
Wei Chen
Y. H. Kim
G. Lauer
Luqiao Liu
N. Marchack
S. Murthy
E. O'Sullivan
J. H. Park
M. Reuter
R. Robertazzi
Philip Louis Trouilloud
Y. Zhu
Daniel C. Worledge
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Citations (50)
Low-current spin transfer torque MRAM
2015
INTERMAG | IEEE International Magnetics Conference
Daniel C. Worledge
A. Annunziata
Sam Brown
Wei Chen
J. Harms
Guohan Hu
Young K. Kim
C. Kothandaraman
G. Lauer
Jong-bae Lee
Luqiao Liu
S. Murthy
J. Nowak
E. O'Sullivan
Jeong Heon Park
R. Robertazzi
J. Z. Sun
Philip Louis Trouilloud
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Citations (4)
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