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Shih Wei Huang
Shih Wei Huang
Academia Sinica
Ohmic contact
Indium
Electron mobility
Schottky barrier
Work function
3
Papers
16
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High-Performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying Barrier-Type Indium Electrodes
2018
ACS Applied Materials & Interfaces
Yu-Ting Huang
Yi Hsun Chen
Yi-Ju Ho
Shih Wei Huang
Yih Ren Chang
Kenji Watanabe
Takashi Taniguchi
Hsiang-Chih Chiu
Chi-Te Liang
Raman Sankar
Fangcheng Chou
Chun-Wei Chen
Wei-Hua Wang
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Citations (16)
High-performance InSe transistors with ohmic contact enabled by nonrectifying-barrier-type indium electrodes
2018
Yu-Ting Huang
Yi Hsun Chen
Yi-Ju Ho
Shih Wei Huang
Yih Ren Chang
Kenji Watanabe
Takashi Taniguchi
Hsiang-Chih Chiu
Chi-Te Liang
Raman Sankar
Fangcheng Chou
Chun-Wei Chen
Wei-Hua Wang
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High-performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying-barrier-type Indium Electrodes.
2018
arXiv: Mesoscale and Nanoscale Physics
Yu-Ting Huang
Yi Hsun Chen
Yi-Ju Ho
Shih Wei Huang
Yih Ren Chang
Kenji Watanabe
Takashi Taniguchi
Hsiang-Chih Chiu
Chi-Te Liang
Raman Sankar
Fangcheng Chou
Chun-Wei Chen
Wei-Hua Wang
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