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Tsunehisa Sakoda
Tsunehisa Sakoda
Failure rate
Static random-access memory
Gate dielectric
Optoelectronics
Circuit Failure
3
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10
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1st quantitative failure-rate calculation for the actual large-scale SRAM using ultra-thin gate-dielectric with measured probability of the gate-current fluctuation and simulated circuit failure-rate
2007
Symposium on VLSI Technology
Tsunehisa Sakoda
Naoyoshi Tamura
Shiqin Q Xiao
H. Minakata
Y. Morisaki
Keita Nishigaya
Toshiharu Saiki
Tomiichi Uetake
Tetsuya Iwasaki
H. Ehara
H. Matsuyama
Hirohiko M. Shimizu
Koji Hashimoto
M. Kimoto
Masataka Kase
Kenji Ikeda
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1st quantitative failure-rate calculation for the actual large-scale SRAM using ultra-thin gate-dielectric with measured probability of the gate-current fluctuation and simulated circuit failure-rate
2007
Symposium on VLSI Technology
Tsunehisa Sakoda
Naoyoshi Tamura
Shiqin Q Xiao
H. Minakata
Y. Morisaki
Keita Nishigaya
Toshiharu Saiki
Tomiichi Uetake
Tetsuya Iwasaki
H. Ehara
Hideya Matsuyama
Hirohiko M. Shimizu
Koji Hashimoto
M. Kimoto
Masataka Kase
Kenji Ikeda
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High-Performance Low Operation Power Transistor for 45nm Node Universal Applications
2006
VLSIT | Symposium on VLSI Technology
Masashi Shima
Kenichi Okabe
A. Yamaguchi
Tsunehisa Sakoda
K Kawamura
Sergey Pidin
M. Okuno
Tamotsu Owada
K. Sugimoto
J. Ogura
H. Kokura
H. Morioka
Takanobu Watanabe
T. Isome
K. Okoshi
T Mori
Y. Hayami
H. Minakata
Akiyoshi Hatada
Y. Shimamune
Akira Katakami
H. Ota
Sakum
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Citations (10)
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