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Rohit R. Karnaty
Rohit R. Karnaty
University of California, Santa Barbara
Optoelectronics
Gallium nitride
High-electron-mobility transistor
Linearity
Polar
3
Papers
10
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0
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A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT
2020
DRC | Device Research Conference
Pawana Shrestha
Matthew Guidry
Brian Romanczyk
Rohit R. Karnaty
Nirupam Hatui
Christian Wurm
Athith Krishna
Shubhra S Pasayat
Stacia Keller
James F. Buckwalter
Umesh K. Mishra
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High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz
2020
IEEE Electron Device Letters
Pawana Shrestha
Matthew Guidry
Brian Romanczyk
Nirupam Hatui
Christian Wurm
Athith Krishna
Shubhra S Pasayat
Rohit R. Karnaty
Stacia Keller
James F. Buckwalter
Umesh K. Mishra
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Virtual-Source Modeling of N-polar GaN MISHEMTS
2019
Rohit R. Karnaty
Umesh K. Mishra
James F. Buckwalter
Matthew Guidry
Pawana Shrestha
Brian Romanczyk
Nirupam Hatui
Xun Zheng
Christian Wurm
Haoran Li
Stacia Keller
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