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M. Higashi
M. Higashi
Renesas Electronics
Electronic engineering
High-κ dielectric
CMOS
Engineering
Ion implantation
4
Papers
14
Citations
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Extremely Low Keff (1.9) Cu Interconnects with Air Gap Formed Using SiOC
2007
IITC | International Interconnect Technology Conference
Takeshi Harada
Akira Ueki
Kazuo Tomita
K. Hashimoto
J. Shibata
H. Okamura
Kazunori Yoshikawa
T. Iseki
M. Higashi
S. Maejima
Kotaro Nomura
Kinya Goto
T. Shono
Seiji Muranaka
Naoki Torazawa
Shuji Hirao
M. Matsumoto
T. Sasaki
Susumu Matsumoto
S. Ogawa
Masahiko Fujisawa
A. Ishii
Masazumi Matsuura
T. Ueda
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Citations (7)
Advanced Poly-Si NMIS and Poly-Si/TiN PMIS Hybrid-Gate High-k CMIS using PVD/CVD-Stacked TiN and Local Strain Technique
2007
VLSIT | Symposium on VLSI Technology
Yukio Nishida
Takaaki Kawahara
Shinsuke Sakashita
M. Mizutani
S. Yamanari
M. Higashi
N. Murata
Masao Inoue
Jiro Yugami
S. Endo
T. Hayashi
T. Yamashita
Hidekazu Oda
Y. Inoue
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Citations (2)
Cost Worthy and High Performance LSTP CMIS; Poly-Si/HfSiON nMIS and Poly-Si/TiN/HfSiON pMIS
2006
IEDM | International Electron Devices Meeting
T. Hayashi
Yukio Nishida
Shinsuke Sakashita
M. Mizutani
S. Yamanari
M. Higashi
Takaaki Kawahara
Masao Inoue
Jiro Yugami
J. Tsuchimoto
K. Shiga
N. Murata
H. Sayama
T. Yamashita
Hidekazu Oda
T. Kuroi
T. Eimori
Y. Inoue
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Citations (2)
Performance Enhancement in 45-nm Ni Fully-Silicided Gate/High-k CMIS Using Substrate Ion Implantation
2006
VLSIT | Symposium on VLSI Technology
Yukio Nishida
T. Yamashita
S. Yamanari
M. Higashi
K. Shiga
N. Murata
M. Mizutani
Masao Inoue
Shinsuke Sakashita
Kenichi Mori
Jiro Yugami
T. Hayashi
Akihiro Shimizu
Hidekazu Oda
T. Eimori
O. Tsuchiya
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Citations (3)
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