Old Web
English
Sign In
Acemap
>
authorDetail
>
C.L.A. Cerny
C.L.A. Cerny
Wright Laboratory
Analytical chemistry
Ohmic contact
Heterojunction
Electronic engineering
Acceptor
5
Papers
36
Citations
0.00
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (5)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
Emitter utilization in heterojunction bipolar transistors
1997
Solid-state Electronics
T. Quach
T. Jenkins
J. Barrette
C. Bozada
C.L.A. Cerny
G. Desalvo
R. Dettmer
J. Ebel
J. Gillespie
Charles K. Havasy
C. Ito
K. Nakano
C. Pettiford
J. Sewell
D. Via
R. Anholt
Show All
Source
Cite
Save
Citations (2)
Beryllium ion implantation in GaAsSb epilayers on InP
1996
Journal of Applied Physics
K.G. Merkel
Victor M. Bright
C.L.A. Cerny
F. L. Schuermeyer
James S. Solomon
R. Kaspi
Show All
Source
Cite
Save
Citations (3)
Improved p-channel InAlAsGaAsSb higfet using Ti/Pt/Au ohmic contacts to beryllium implanted GaAsSb
1996
Solid-state Electronics
K.G. Merkel
C.L.A. Cerny
Victor M. Bright
Fritz Schuermeyer
T.P. Monahan
R. T. Lareau
R. Kaspi
A. K. Rai
Show All
Source
Cite
Save
Citations (9)
P-channel, ion implanted, GaAsSb/InAlAs HIGFETs on InP for digital and microwave applications
1995
ACHSSDC | IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
C.L.A. Cerny
K. G. Merkel
F.L. Schuermeyer
Victor M. Bright
R. Kaspi
Show All
Source
Cite
Save
Citations (1)
Temperature dependence of the direct band gap energy and donor–acceptor transition energies in Be‐doped GaAsSb lattice matched to InP
1994
Applied Physics Letters
K.G. Merkel
Victor M. Bright
Michael A. Marciniak
C.L.A. Cerny
M. O. Manasreh
Show All
Source
Cite
Save
Citations (21)
1