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Ben Heying
Ben Heying
University of California, Berkeley
Analytical chemistry
Metalorganic vapour phase epitaxy
Gallium nitride
Molecular beam epitaxy
Sapphire
5
Papers
150
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Gallium nitride materials - progress, status, and potential roadblocks
2002
Proceedings of the IEEE
R. F. Davis
A. M. Roskowski
Edward A. Preble
James S. Speck
Ben Heying
Jaime A. Freitas
E. R. Glaser
William E. Carlos
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Citations (43)
Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy
2001
Japanese Journal of Applied Physics
C. R. Elsass
C. Poblenz
Ben Heying
P. Fini
P. M. Petroff
Steven P. DenBaars
Umesh K. Mishra
James S. Speck
Adam William Saxler
Said Elhamrib
W. C. Mitchel
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Citations (9)
Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
2000
Japanese Journal of Applied Physics
C. R. Elsass
Iolia P. Smorchkova
Ben Heying
E. Haus
C. Poblenz
P. Fini
Kevin Maranowski
P. M. Petroff
Steven P. DenBaars
Umesh K. Mishra
James S. Speck
Adam William Saxler
Said Elhamri
W. C. Mitchel
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Citations (7)
High electron mobility 2DEG in AlGaN/GaN structures
1999
Journal of Electronic Materials
Chris R. Elsass
Y. Smorchkova
E. Haus
P. Fini
P. M. Petroff
Steven P. DenBaars
Umesh K. Mishra
James S. Speck
Ben Heying
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Morphological and structural transitions in GaN films grown on sapphire by metal-organic chemical vapor deposition
1996
Japanese Journal of Applied Physics
X. H. Wu
P. Fini
Salka Keller
E. J. Tarsa
Ben Heying
Umesh K. Mishra
Steven P. DenBaars
James S. Speck
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Citations (91)
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