Old Web
English
Sign In
Acemap
>
authorDetail
>
Junichi Watanabe
Junichi Watanabe
Fujitsu
Electronic engineering
Salicide
Leakage (electronics)
CMOS
Annealing (metallurgy)
5
Papers
60
Citations
0.00
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (5)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
Development of 16 Mb NRAM Aiming for High Reliability, Small Cell Area, and High Switching Speed
2021
IMW | International Memory Workshop
Hitoshi Saito
Junichi Watanabe
J. Seino
T. Tamura
Naoya Sashida
K. Hara
K. Kawabata
A. Fujii
J. Ohno
A. Nakakubo
Manabu Kojima
T. Shimoyama
H. Wada
L. Cleveland
H. Luan
R. Sen
N. Leong
T. Gallagher
T. Rueckes
Show All
Source
Cite
Save
Citations (0)
Optimization Simulation of LSI Replacement Condition by Thermal Analysis
2001
Journal of Japan Institute of Electronics Packaging
Akira Ueda
Junichi Watanabe
Toshihisa Sato
Show All
Source
Cite
Save
Citations (0)
A new leakage mechanism of Co salicide and optimized process conditions [for CMOS]
1999
IEEE Transactions on Electron Devices
K. Goto
Atsuo Fushida
Junichi Watanabe
Takae Sukegawa
Yoko Tada
Tomoji Nakamura
Tatsuya Yamazaki
T. Sugii
Show All
Source
Cite
Save
Citations (33)
A comparative study of leakage mechanism of Co and Ni salicide processes
1998
IRPS | International Reliability Physics Symposium
K. Goto
Junichi Watanabe
Takae Sukegawa
Atsuo Fushida
Takashi Sakuma
T. Sugii
Show All
Source
Cite
Save
Citations (7)
Leakage mechanism and optimized conditioms of Co salicide process for deep-submicron CMOS devices
1995
IEDM | International Electron Devices Meeting
K. Goto
I. Fushida
Junichi Watanabe
T. Sukegawa
K Kawamura
Tatsuya Yamazaki
T. Sugii
Show All
Source
Cite
Save
Citations (20)
1