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Junji Shimokawa
Junji Shimokawa
Toshiba
Electronic engineering
Swing
Subthreshold conduction
Planar
Optoelectronics
3
Papers
6
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0
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Simulation of planar single-gate Si tunnel FET with average subthreshold swing of less than 60 mV/decade for 0.3 V operation
2018
Japanese Journal of Applied Physics
Kentaro Kukita
Tadayoshi Uechi
Junji Shimokawa
Masakazu Goto
Yoshinori Yokota
Shigeru Kawanaka
Tetsufumi Tanamoto
Hiroyoshi Tanimoto
Shinichi Takagi
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TCAD simulation of planar single-gate Si tunnel FET with average subthreshold swing less than 60 mV/dec for 0.3 V operation
2017
The Japan Society of Applied Physics
K. Kukita
T. Uechi
Junji Shimokawa
Masakazu Goto
Yoshinori Yokota
Shigeru Kawanaka
Tetsufumi Tanamoto
Masato Koyama
Hiroyoshi Tanimoto
Shinichi Takagi
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Theoretical approach and precise description of PBTI in high-k gate dielectrics based on electron trap in pre-existing and stress-induced defects
2009
IRPS | International Reliability Physics Symposium
Junji Shimokawa
Motoyuki Sato
Chikashi Suzuki
Mitsutoshi Nakamura
Yuzuru Ohji
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