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M. A. di Forte-Poisson
M. A. di Forte-Poisson
Saitama University
Chemistry
Condensed matter physics
Annealing (metallurgy)
High-electron-mobility transistor
Resonance
5
Papers
54
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Evaluation of Thermal Versus Plasma-Assisted ALD Al 2 O 3 as Passivation for InAlN/AlN/GaN HEMTs
2015
IEEE Electron Device Letters
Anna Malmros
P. Gamarra
M. A. di Forte-Poisson
Hans Hjelmgren
C. Lacam
Mattias Thorsell
M. Tordjman
R. Aubry
Niklas Rorsman
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Citations (17)
Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures
2015
Semiconductor Science and Technology
Johan Bergsten
Anna Malmros
M. Tordjman
P. Gamarra
C. Lacam
M. A. di Forte-Poisson
Niklas Rorsman
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Citations (18)
A new realisation of Schottky diodes on n-type InP
1990
Semiconductor Science and Technology
C. Gaonach
S. Cassette
M. A. di Forte-Poisson
C. Brylinski
M Champagne
A. Tardella
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Citations (8)
Magnetophonon resonance in n+n−n+ InP up to 40 T
1988
Semiconductor Science and Technology
K. Yamada
N. Miura
L. Eaves
J C Portal
M. A. di Forte-Poisson
C. C. Brylinski
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Citations (4)
Electric field-induced quasi-elastic inter-landau level scattering in the space-charge-limited magnetoconductivity of n+n−n+ InP structures
1986
Superlattices and Microstructures
C. A. Payling
P. S. S. Guimarães
L. Eaves
B.R. Snell
J. C. Portal
M. A. di Forte-Poisson
C. Brylinski
G. Hill
M. A. Pate
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Citations (7)
1