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E. L. Kennon
E. L. Kennon
University of Florida
Analytical chemistry
Annealing (metallurgy)
Activation energy
Doping
Composite material
4
Papers
17
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Dissolution of antiphase domain boundaries in GaAs on Si(001) via post-growth annealing
2019
Journal of Materials Science
Caleb Shuan Chia Barrett
A. Atassi
E. L. Kennon
Z. Weinrich
K. Haynes
Xinyu Bao
Patrick M. Martin
K. S. Jones
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Citations (4)
Deactivation of electrically supersaturated Te-doped InGaAs grown by MOCVD
2017
Journal of Materials Science
E. L. Kennon
Tommaso Orzali
Yan Xin
Alexey Vert
Aaron G. Lind
K. S. Jones
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Citations (1)
Effect of bulk growth temperature on antiphase domain boundary annihilation rate in MOCVD-grown GaAs on Si(001)
2016
Journal of Crystal Growth
Caleb Shuan Chia Barrett
Thomas P. Martin
Xinyu Bao
E. L. Kennon
L. Gutierrez
Patrick M. Martin
Errol Antonio C. Sanchez
K. S. Jones
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Citations (10)
Activation of Si implants into InAs characterized by Raman scattering
2016
Journal of Applied Physics
Aaron G. Lind
Thomas P. Martin
Victoria C. Sorg
E. L. Kennon
V. Q. Truong
Henry Aldridge
Christopher R. Hatem
Michael O. Thompson
K. S. Jones
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Citations (2)
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