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C. Lo

National Taiwan Normal University

6

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48

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Double Layers Omega FETs with Ferroelectric HfZrO 2 for One-Transistor Memory

2020 IRPS | International Reliability Physics Symposium
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Ferroelectric HfZrO2 FETs for steep switch onset

2019 Microelectronic Engineering
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Non-Volatile Ferroelectric FETs Using 5-nm Hf 0.5 Zr 0.5 O 2 With High Data Retention and Read Endurance for 1T Memory Applications

2019 IEEE Electron Device Letters
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Evaluation of sweep modes for switch response on ferroelectric negative capacitance FETs

2019 Applied Physics Express
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Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf 0.25 Zr 0.75 O 2 Negative Capacitance FETs

2019 IEDM | International Electron Devices Meeting
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