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Norio Okada
Norio Okada
Copper
Dielectric
Dielectric strength
Time-dependent gate oxide breakdown
Materials science
2
Papers
9
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Optimization of metallization processes for 32-nm-node highly reliable ultralow-k (k=2.4)/Cu multilevel interconnects incorporating a bilayer low-k barrier cap (k=3.9)
2009
IEDM | International Electron Devices Meeting
M. Iguchi
Shinji Yokogawa
H. Aizawa
Y. Kakuhara
Hideaki Tsuchiya
Norio Okada
K. Imai
M. Tohara
K. Fujii
Toshiharu Watanabe
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Quantitative analysis of correlation between insulator surface copper contamination and TDDB lifetime based on actual measurement
2008
IITC | International Interconnect Technology Conference
Daisuke Oshida
T. Takewaki
M. Iguchi
Toshiji Taiji
T. Morita
Yasuaki Tsuchiya
Hideaki Tsuchiya
Shinji Yokogawa
Hiroyuki Kunishima
H. Aizawa
Norio Okada
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Citations (8)
1