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C. A. Horne

Georgia Institute of Technology

4

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Characteristics of Green Light-Emitting Diodes Using an InGaN:Mg/GaN:Mg Superlattice as p-Type Hole Injection and Contact Layers

2008 Journal of Electronic Materials
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Blue light emitting diodes grown on freestanding (11-20) a -plane GaN substrates

2008 Applied Physics Letters
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III-nitride heterostructure field-effect transistors grown on semi-insulating GaN substrate without regrowth interface charge

2008 Applied Physics Letters
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Surface treatment on the growth surface of semi‐insulating GaN bulk substrate for III‐nitride heterostructure field‐effect transistors

2008 Physica Status Solidi (c)
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