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P. Gamarra
P. Gamarra
Alcatel-Lucent
Transistor
Fabrication
Condensed matter physics
Indium
Vacancy defect
3
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4
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Technologie InAlGaN/GaN/SiC à faibles effets mémoires délivrant 10W/mm à 30 GHz
2019
Stéphane Piotrowicz
O. Patard
P. Gamarra
Clément Potier
Eric Chartier
Christian Dua
Jean-Claude Jacquet
M. Lacam
N. Michel
Jean-Christophe Nallatamby
M. Ouali
P. Altuntas
Michel Prigent
Sylvain Delage
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The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer
2019
Journal of Applied Physics
Ranim Mohamad
Marie-Pierre Chauvat
Slawomir Kret
P. Gamarra
Sylvain Delage
Viwanou Hounkpati
C. Lacam
Jun Chen
Pierre Ruterana
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Low Frequency Noise in In-Situ SiN Passivated InAlGaN/GaN HEMTs
2017
ICNF | International Conference on Noise and Fluctuations
Mehdi Rzin
Bruno Guillet
Laurence Méchin
P. Gamarra
C. Lacam
Farid Medjdoub
Jean-Marc Routoure
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