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Jiro Wada
Jiro Wada
Hitachi
Transistor
Optoelectronics
Thermography
Doping
Analytical chemistry
4
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10
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Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs
2015
Physica Status Solidi (a)
Maire Power
James W Pomeroy
Yohei Otoki
Takeshi Tanaka
Jiro Wada
Masaaki Kuzuhara
Wolfgang Jantz
Andrew Souzis
Martin Kuball
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Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs: Effect of carbon and iron doping
2015
Maire Power
James W Pomeroy
Yohei Otoki
Takeshi Tanaka
Jiro Wada
Masaaki Kuzuhara
Wolfgang Jantz
Andrew Souzis
Martin Kuball
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Extended Abstracts of WOCSDICE-EXMATEC-2014, Delphi, Greece
2014
Maire Power
James W Pomeroy
Julian Anaya Calvo
Yohei Otoki
Takeshi Tanaka
Jiro Wada
Masaaki Kuzuhara
Wolfgang Jantz
Andrew Souzis
Martin Kuball
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Impact of buffer layers on thermal properties of AlGaN/GaN-on-SiC high electron mobility transistors (HEMTs)
2014
Maire Power
James W Pomeroy
Julian Anaya Calvo
Yohei Otoki
Takeshi Tanaka
Jiro Wada
Masaaki Kuzuhara
Wolfgang Jantz
Andrew Souzis
Martin Kuball
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