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A.B. Storm
A.B. Storm
Delft University of Technology
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Materials science
Electronic engineering
Transfer-matrix method (optics)
Silicon-germanium
4
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17
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Resonant Tunneling through (Submicron) Si/SiGe Double Barrier Structures Fabricated by Selective Epitaxy
2010
DRC | Device Research Conference
P.W. Lukey
J. Caro
A.B. Storm
E. van der Drift
T. Zijlstra
K. Werner
S. Radelaar
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Gas source MBE growth of SiSiGe device materials
1996
Journal of Crystal Growth
K. Werner
A.B. Storm
S. Butzke
J.W.H. Maes
M. van Rooy
Paul F. A. Alkemade
E. Algra
M. Somers
B.G.M. de Lange
E. van der Drift
T. Zijlstra
S. Radelaar
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Resonant Tunneling through (Submicron) Si/SiGe Double Barrier Structures Fabricated by Selective Epitaxy
1995
ESSDERC | European Solid-State Device Research Conference
P.W. Lukey
J. Caro
A.B. Storm
E. van der Drift
T. Zijlstra
K. Werner
S. Radelaar
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Roughening of SiGe layers grown with gas-source MBE: dependence on Ge concentration and growth temperature
1995
Journal of Crystal Growth
A.B. Storm
P.W. Lukey
K. Werner
J. Caro
S. Radelaar
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Citations (5)
1