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Marek Pabisz
Marek Pabisz
Electronic engineering
Gallium nitride
Leakage (electronics)
Schottky diode
Chemistry
4
Papers
34
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Demonstration of Low-Leakage-Current Low-On-Resistance 600-V 5.5-A GaN/AlGaN HEMT
2009
IEEE Electron Device Letters
Xiaobin Xin
Junxia Shi
Linlin Liu
John Paul Edwards
Kierthi Swaminathan
Marek Pabisz
Michael Murphy
L. F. Eastman
Milan Pophristic
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600V GaN Schottky Barrier Power Devices for High Volume and Low Cost Applications
2008
Materials Science Forum
Lin-Lin Liu
Ting Gang Zhu
Michael Murphy
Marek Pabisz
Milan Pophristic
Boris Peres
Tom Hierl
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SECONDE COUCHE DE METAL SUR CONTACT SCHOTTKY DESTINEE A AMELIORER LES PERFORMANCES D’UNE DIODE SCHOTTKY AU GaN
2006
Ting Gang Zhu
Marek Pabisz
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Novel 600 V GaN Schottky diode delivering SiC performance at Si prices
2005
APEC | Applied Power Electronics Conference
I. Cohen
Ting Gang Zhu
Linlin Liu
Michael Murphy
Milan Pophristic
Marek Pabisz
Mark Gottfried
Bryan S. Shelton
Boris Peres
Alex D. Ceruzzi
R. A. Stall
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Citations (5)
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