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M. Rizwan Khan
M. Rizwan Khan
COMSATS Institute of Information Technology
Analytical chemistry
Radiation
Radiochemistry
Chemistry
Irradiation
3
Papers
48
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Optical and electrical characteristics of 17 keV X-rays exposed TiO2 films and Ag/TiO2/p-Si MOS device
2017
Materials Science in Semiconductor Processing
M. Ishfaq
M. Rizwan Khan
Awais Ali
Sunil Bhardwaj
Cinzia Cepek
A. S. Bhatti
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Citations (12)
The effect of oxide layer thickness on the quantification of 1.5 MeV γ–radiation induced interface traps in the Ag/SiO2/Si MOS devices
2017
Materials Science in Semiconductor Processing
M. Rizwan Khan
M. Ishfaq
Awais Ali
A. S. Bhatti
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Citations (2)
1.5 MeV proton irradiation effects on electrical and structural properties of TiO2/n-Si interface
2014
Journal of Applied Physics
M. Ishfaq
M. Rizwan Khan
Muhammad Fahad Bhopal
F. Nasim
A. Ali
A. S. Bhatti
Iram Ahmed
Sunil Bhardwaj
Cinzia Cepek
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Citations (34)
1