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L. Clement
L. Clement
NXP Semiconductors
Nanometre
Electron energy loss spectroscopy
Lattice constant
Doping
Inorganic chemistry
2
Papers
21
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Analytical STEM Comparative Study of the Incorporation of Covalent (Ge) or Heterovalent (As) Atoms in Silicon Crystal
2008
R. Pantel
L. Clement
L. Rubaldo
G. Borot
Didier Dutartre
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Localized SOI technology: an innovative Low Cost self-aligned process for Ultra Thin Si-film on thin BOX integration for Low Power applications
2007
IEDM | International Electron Devices Meeting
S. Monfray
M.-P. Samson
Didier Dutartre
T. Ernst
E. Rouchouze
D Renaud
B. Guillaumot
D. Chanemougame
G. Rabille
S. Borel
J. P. Colonna
C. Arvet
Nicolas Loubet
Yves Campidelli
J.-M. Hartmann
L Vandroux
Daniel Bensahel
A. Toffoli
F. Allain
A. Margin
L. Clement
A. Quiroga
S. Deleonibus
T. Skotnicki
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Citations (18)
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