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S. Eftychis
S. Eftychis
University of Crete
Nanowire
Molecular beam epitaxy
Crystallography
Amorphous solid
Chemistry
3
Papers
37
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Effects of ultrathin AlN prelayers on the spontaneous growth of GaN nanowires by plasma assisted molecular beam epitaxy
2019
Journal of Crystal Growth
S. Eftychis
J.E. Kruse
K. Tsagaraki
T. Koukoula
Th. Kehagias
Ph. Komninou
A. Georgakilas
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Citations (3)
Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy
2016
Journal of Applied Physics
J.E. Kruse
Liverios Lymperakis
S. Eftychis
A. Adikimenakis
G. Doundoulakis
K. Tsagaraki
M. Androulidaki
A. Olziersky
P. Dimitrakis
V. Ioannou-Sougleridis
P. Normand
T. Koukoula
Th. Kehagias
Ph. Komninou
G. Konstantinidis
A. Georgakilas
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Citations (21)
Understanding the effects of Si (111) nitridation on the spontaneous growth and properties of GaN nanowires
2016
Journal of Crystal Growth
S. Eftychis
J.E. Kruse
T. Koukoula
Th-H. Kehagias
Ph-H. Komninou
A. Adikimenakis
K. Tsagaraki
M. Androulidaki
P. Tzanetakis
E. Iliopoulos
A. Georgakilas
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Citations (13)
1