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S. Fascko
S. Fascko
RWTH Aachen University
Microstructure
Molecular beam epitaxy
Germanium
Ohmic contact
Nuclear magnetic resonance
2
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33
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Ohmic contact formation mechanism of the PdGeAu system on n-type GaSb grown by molecular beam epitaxy
1998
Journal of Applied Physics
Alexander Vogt
A. Simon
Hans L. Hartnagel
J. Schikora
V. Buschmann
M. Rodewald
Hartmut Fuess
S. Fascko
C. Koerdt
H. Kurz
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Ohmsche Kontakte des Systems Pd/Ge/Au auf n-GaSb
1998
Alexander Vogt
Arne Simon
Hans L. Hartnagel
J. Schikora
V. Buschmann
M. Rodewald
Hartmut Fuess
S. Fascko
H. Kurz
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