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M. D. Craven

University of California, Santa Barbara

20

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Quantum Efficiency of III-Nitride Emitters: Evidence for Defect-Assisted Nonradiative Recombination and its Effect on the Green Gap

2019 Physical review applied
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Field-assisted Shockley-Read-Hall recombinations in III-nitride quantum wells

2017 Applied Physics Letters
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All-optical measurements of carrier dynamics in bulk-GaN LEDs: Beyond the ABC approximation

2017 Applied Physics Letters
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Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures

2016 Applied Physics Letters
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Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling

2016 Applied Physics Letters
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Erratum: “Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures” [Appl. Phys. Lett. 109, 033504 (2016)]

2016 Applied Physics Letters
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U.S. Department of Energy, National Energy Technology Laboratory Solid-State Lighting Core Technologies Light Emitting Diodes on Semipolar Bulk GaN Substrate with IQE > 80% at 150 A/cm2 and 100 0C

2015
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Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation

2015 Applied Physics Letters
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Optical evidence for lack of polarization in (112¯0) oriented GaN∕(AlGa)N quantum structures

2005 Applied Physics Letters
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Reduction of bound‐state and nonradiative defect densities in nonpolar (11&2macr;0) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique

2005 Physica Status Solidi (c)
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