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Bernard J. Schmanski
Bernard J. Schmanski
BAE Systems
Electronic engineering
High-electron-mobility transistor
Transistor
Optoelectronics
Microwave
4
Papers
22
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S3-P3: Advanced no-field-plate AlGaN/GaN hemts for millimeter-wave MMIC applications
2014
Dong Xu
K. K. Chu
Jose Diaz
L. Mt. Pleasant
Robert J. Lender
Bernard J. Schmanski
M. Ashman
J. Hulse
M. Gerlach
Wenhua Zhu
P. Seekell
L. Schlesinger
R. Isaak
K. Nichols
James J. Komiak
Xiaoping Yang
K. H. G. Duh
P.M. Smith
P.C. Chao
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Citations (7)
Procédé et conception d'une interconnexion rf via un trou métallisé traversant
2012
Robert Actis
P.C. Chao
Robert J. Lender
Kanin Chu
Bernard J. Schmanski
Sue May Jessup
Dong Xu
Anthony A. Immorlica
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Asymmetrically Recessed 50-nm Gate-Length Metamorphic High Electron-Mobility Transistor With Enhanced Gain Performance
2008
IEEE Electron Device Letters
Dong Xu
W. Kong
Xiaoping Yang
P.M. Smith
D. Dugas
P.C. Chao
Gabriel Cueva
Lee Mohnkern
P. Seekell
L. Mt. Pleasant
Bernard J. Schmanski
K. H. G. Duh
H. Karimy
Anthony A. Immorlica
James J. Komiak
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Citations (11)
An ultra-low DC power ultra-flat multi-octave MHEMT LNA MMIC
2000
GAICS | IEEE Gallium Arsenide Integrated Circuit Symposium
O. S. A. Tang
K.-C. Hwang
P.C. Chao
K. Nichols
L. MtPleasant
Bernard J. Schmanski
M. Lang
K. H. G. Duh
P.M. Smith
S Valenti
R. Melcher
W Taft
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Citations (4)
1