author-photo

Jen-Inn Chyi

National Central University
University of Illinois at Urbana–Champaign

427

Papers

5034

Citations

Citation Trend

Filter By

Papers (427) Sort By

Journal Conference Others

Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array

2021 Materials
Show All
- Source
- Cite
- Save
Citations (0)
Crystal Transformation of Cubic BN Nanoislands to Rhombohedral BN Sheets on AlN for Deep-UV Light-Emitting Diodes

2020
Show All
- Source
- Cite
- Save
Citations (1)
Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record FT-Lg Product of 13.9 GHz-μm

2020 VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
Show All
- Source
- Cite
- Save
Citations (0)
AlInGaN/GaN HEMTs with High Johnson’s Figure-of-Merit on Low Resistivity Silicon Substrate

2020 IEEE Journal of the Electron Devices Society
Show All
- Source
- Cite
- Save
Citations (1)
The Influence of Superlattice Structure on the Dynamic Buffer Response of AlInN/GaN-on-Si HEMTs

2020 IEEE Transactions on Nanotechnology
Show All
- Source
- Cite
- Save
Citations (1)
The effect of growth parameters on the residual carbon concentration in GaN high electron mobility transistors: theory, modeling, and experiments

2020
- Indraneel Sanyal
- Jen-Inn Chyi
Show All
- Source
- Cite
- Save
Citations (0)
Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTs

2020 IEEE Journal of the Electron Devices Society
Show All
- Source
- Cite
- Save
Citations (2)
High Electron Mobility of 1880 cm 2 V-S In 0.17 Al 0.83 N/GaN-on-Si HEMTs with GaN Cap Layer

2020 WiPDA | IEEE Workshop on Wide Bandgap Power Devices and Applications
Show All
- Source
- Cite
- Save
Citations (0)
Design and demonstration of tunable amplified sensitivity of AlGaN/GaN high electron mobility transistor (HEMT)-based biosensors in human serum

2019 Analytical Chemistry
Show All
- Source
- Cite
- Save
Citations (18)
Effect of AlGaN/GaN growth using triethylgallium on 2DEG-side interfacial charge

2019 The Japan Society of Applied Physics
Show All
- Source
- Cite
- Save
Citations (0)