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R. S. Schwindt
R. S. Schwindt
University of Illinois at Urbana–Champaign
Transistor
Electronic engineering
Gallium nitride
High-electron-mobility transistor
Power-added efficiency
2
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26
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Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz
2004
IEEE Electron Device Letters
M.D. Hampson
Shyh-Chiang Shen
R. S. Schwindt
R. K. Price
U. Chowdhury
M. M. Wong
T. G. Zhu
Dongwon Yoo
R. D. Dupuis
Milton Feng
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Citations (18)
Millimeter-wave high-power 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs on SiC substrates
2003
IEEE Microwave and Wireless Components Letters
R. S. Schwindt
V. Kumar
A. Kuliev
Grigory Simin
J. Yang
M. A. Khan
M. Muir
Ilesanmi Adesida
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Citations (8)
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