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Hyae-ryoung Lee
Hyae-ryoung Lee
Samsung
Optoelectronics
Physics
Electronic engineering
Transistor
CMOS
3
Papers
17
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The effects of TaN thickness and strained substrate on the performance and PBTI characteristics of poly-Si/TaN/HfSiON MOSFETs
2004
IEDM | International Electron Devices Meeting
Hyunyoon Cho
Hyae-ryoung Lee
Seong-Geon Park
Hong-Sick Park
Taek Soo Jeon
Beom Jun Jin
Sang Bom Kang
Sangjoo Lee
Young-pil Kim
In-Sun Jung
J. W. Lee
Yun-Seung Shin
U-I. Chung
June Moon
Jeong-Hyuk Choi
Y. S. Jeong
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Citations (9)
CMOS transistors with a 70-nm gate length for 0.13-μm-node high-performance applications
2004
Journal of the Korean Physical Society
Kyoung-Seok Rha
Jeong Ho Lyu
Jin-Suk Jung
Jung-A Choi
Hae-Kyung Kong
Hyae-ryoung Lee
Dong Hun Lee
Jeong Hwan Yang
Eunseung Jung
Young-Wug Kim
Kwang Pyuk Suh
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Fully working 1.25 /spl mu/m/sup 2/ 6T-SRAM cell with 45 nm gate length triple gate transistors
2003
IEDM | International Electron Devices Meeting
Jeong Hwan Yang
You Seung Jin
Hyae-ryoung Lee
Kyoung-Seok Rha
Jung-A Choi
Su-Kon Bae
S. Maeda
Young-Wug Kim
Kwang Pyuk Suh
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Citations (7)
1