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M. Fayolle-Lecocq
M. Fayolle-Lecocq
Silicon
Optoelectronics
Chemical vapor deposition
Nanowire
Analytical chemistry
3
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20
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GaN HEMTs on silicon for power devices
2012
SOI | International SOI Conference
René Escoffier
A. Torres
M. Fayolle-Lecocq
C. Buj-Dufournet
E. Morvan
Matthew Charles
M-A Poisson
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Citations (1)
Ultra high density three dimensional capacitors based on Si nanowires array grown on a metal layer
2012
Applied Physics Letters
P. H. Morel
G. Haberfehlner
D. Lafond
G. Audoit
V. Jousseaume
C. Leroux
M. Fayolle-Lecocq
T. Baron
T. Ernst
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Citations (19)
Study of CVD nanowire high-k metal interface quality for interconnect level MOS devices
2011
Microelectronic Engineering
P. H. Morel
Cédric Leroux
J.-M. Hartmann
Christine Morin
Pascal Faucherand
Simon Perraud
L. Cagnon
T. Baron
B. Salem
M. Fayolle-Lecocq
T. Ernst
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Citations (0)
1