Old Web
English
Sign In
Acemap
>
authorDetail
>
Jongsung Jeon
Jongsung Jeon
Samsung
Transistor
Dram
Physics
Electronic engineering
Logic gate
6
Papers
46
Citations
0.00
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (6)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
Saddle Fin Structure Effects on the DRAM Access Transistor Performance
2021
Xiang Liu
YUMeng-sun
Noakim Wang
Jongsung Jeon
Blacksmith Wu
Kanyu Cao
Show All
Source
Cite
Save
Citations (0)
Trap-Assisted Passing Word Line Leakage and Variable Retention Time in DRAM
2021
YUMeng-sun
Xiang Liu
Noakim Wang
Jongsung Jeon
Blacksmith Wu
Kanyu Cao
Show All
Source
Cite
Save
Citations (0)
Design for Saddle-Fin Device Performance Boosting with Dual Work Function Gate Formation Word Line
2020
SSICT | International Conference on Solid-State and Integrated Circuits Technology
Xiang Liu
River Jiang
Ning Li
Hang Yang
Jongsung Jeon
Blacksmith Wu
Mark Cao
Show All
Source
Cite
Save
Citations (0)
Simulation Studies about the NON Spacer Effects on the DRAM Access Transistor Performance
2020
SSICT | International Conference on Solid-State and Integrated Circuits Technology
Xiang Liu
Jongsung Jeon
Blacksmith Wu
Mark Cao
Show All
Source
Cite
Save
Citations (0)
Study of Neutron Soft Error Rate (SER) Sensitivity: Investigation of Upset Mechanisms by Comparative Simulation of FinFET and Planar MOSFET SRAMs
2015
IEEE Transactions on Nuclear Science
Jinhyun Noh
Vincent Correas
Soonyoung Lee
Jongsung Jeon
Issam Nofal
Jacques Cerba
Hafnaoui Belhaddad
Dan Alexandrescu
Young-Keun Lee
Steve Kwon
Show All
Source
Cite
Save
Citations (42)
A numerical model using the phase field method for stress induced voiding in a metal line during thermal bake
2013
SISPAD | International Conference on Simulation of Semiconductor Processes and Devices
Yong-Seog Oh
Hyerim Lee
Ibrahim Avci
Sora Park
Jongsung Jeon
Jinseok Kim
Windu Sari
Show All
Source
Cite
Save
Citations (4)
1