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Antonio G. Acosta
Antonio G. Acosta
University of Florida
Stress (mechanics)
MOSFET
Noise spectral density
Field-effect transistor
Semiconductor
2
Papers
5
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Scaling reliability and modeling of ferroelectric capacitors
2010
IRPS | International Reliability Physics Symposium
Antonio G. Acosta
J. Rodriguez
Borna Obradovic
Scott R. Summerfelt
Tamer San
Keith Green
Theodore S. Moise
Srikanth Krishnan
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Citations (1)
Effect of mechanical strain on 1/f noise in metal-oxide semiconductor field-effect transistors
2009
Journal of Applied Physics
Ji-Song Lim
Antonio G. Acosta
Scott E. Thompson
Gijs Bosman
Eddy Simoen
Toshikazu Nishida
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Citations (4)
1