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Yongha Kang
Yongha Kang
Samsung
Electronic engineering
MOSFET
Degradation (geology)
Engineering
Electron
4
Papers
26
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Method to predict length dependency of negative bias temperature instability degradation in p-MOSFETs
2016
Japanese Journal of Applied Physics
Ji-Hoon Seo
Gang-Jun Kim
Donghee Son
Nam-Hyun Lee
Yongha Kang
Bongkoo Kang
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Citations (3)
Degradation of pMOSFETs due to hot electron induced punchthrough
2016
Microelectronics Reliability
Donghee Son
Gang-Jun Kim
Ji-Hoon Seo
Nam-Hyun Lee
Yongha Kang
Bongkoo Kang
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Channel width dependence of AC stress on bulk nMOSFETs
2016
Microelectronics Reliability
Donghee Son
Gang-Jun Kim
Ji-Hoon Seo
Nam-Hyun Lee
Yongha Kang
Bongkoo Kang
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Highly area efficient and cost effective double stacked S/sup 3/ (stacked single-crystal Si) peripheral CMOS SSTFT and SRAM cell technology for 512M bit density SRAM
2004
IEDM | International Electron Devices Meeting
Soon-Moon Jung
Hoon Lim
Won-Seok Cho
Hoosung Cho
Chadong Yeo
Yongha Kang
Daegi Bae
J.H. Na
Kun-Ho Kwak
Bonghyun Choi
Sungjin Kim
Jae-Hun Jeong
Youngchul Chang
Jae-Hoon Jang
Jong-Hyuk Kim
Kinam Kim
Byung-Il Ryu
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Citations (21)
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